Advancing Quantitative Electron MicroscopyQuantitative understanding of electron microscopy (EM) signals is critical to develop new EM techniques that can determine the atomic to nanoscale structure that directly relates to the important properties of a wide range of new materials. We currently... | LEARN MORE
Structural Heterogeneity and Deformation in Metallic lassesThis is an integrated experimental and computational study of the correlation between nanoscale structural heterogeneities and deformation behavior of metallic glasses (MGs). We use 4-dimensional scanning transmission electron microscopy (4D-STEM)... | LEARN MORE
Novel Methods for the Design and Fabrication of Complex Disordered SolidsWe develop an ab initio molecular dynamics (AIMD) and hybrid reverse Monte Carlo (HRMC) simulation algorithm, augmented by ab initio based energy constraints, that couples with experimental input and feedback, including fluctuation microscopy and nuclear... | LEARN MORE
Gallium Oxide Materials Science and Engineering MURI (GAME MURI)In this MURI program, we perform microscopic investigation of the atomic structure and defects that directly relate to the electric, electronic, optical, and thermal properties of bulk and thin film β-Ga2O3 using high-end scanning transmission electron microscopy (STEM) techniques. | LEARN MORE
4D-STEM for Highly Heterogeneous MaterialsFour-dimensional scanning transmission electron microscopy (4D-STEM), enabled by the new-generation pixelated fast STEM detectors, has started revolutionizing the way we acquire electron microscopy data. We advance this new capability to study the... | LEARN MORE
What we do
We develop new atomic-to-nanoscale characterization techniques based on scanning transmission electron microscopy (STEM) to investigate the structural origins of a wide range of important properties of materials. We combine the novel STEM techniques, including fluctuation microscopy, electron nano diffraction, and 4D-STEM, with advanced computational simulations to determine the important structure-property relationships beyond the limits of any conventional characterization or simulation methods. Our current research focus includes the investigation of point and extended defects that dictate the electronic and doping properties of wide band gap semiconductors, the structure, chemistry, and morphology of low-dimensional materials and interfaces, and the nanoscale structural heterogeneity that connects to mechanical and electrical properties of disorders materials, including metallic glasses and amorphous thin films.